| PART |
Description |
Maker |
| STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
|
|
| SKP10N60A SKB10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode
|
Infineon Technologies AG
|
| FK20UM-5 |
Bench Power Supply; Output Voltage:16V; Output Current:10A; Number of Outputs:1; Calibrated:No; Display Technology:LED; Output Current Max:10A; Output Current Min:0A; Output Voltage Max:16V; Output Voltage Min:0V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
|
| STGP10NB60SDFP |
20 A, 600 V, N-CHANNEL IGBT, TO-220AB
N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
N-CHANNEL 10A 600V TO-220FP POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| BP10-005L BP10-01L BP10-08L BP10-10L BP10-02L BP10 |
10A HIGH CURRENT BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| JMK316BJ226ML-T501 LTM4600EV LTM4600IV LTM460006 L |
10A High Effi ciency DC/DC 渭Module
10A High Effi ciency DC/DC μModule
10A High Efficiency DC/DC µModule; Package: LGA; No of Pins: 104; Temperature Range: -40°C to 85°C
10A High Effi ciency DC/DC μModule
|
Linear Technology
LINEAR TECHNOLOGY CORP
|
| STW10NB60 6241 |
N-CHANNEL Power MOSFET
N - CHANNEL 600V - 0.69 - 10A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FFB20UP20DN |
10A, 200V Ultrafast Rectifiers
|
Fairchild Semiconductor
|
| FFD10UP20S |
10A, 200V, Ultrafast Diode
|
Fairchild Semiconductor
|
